Single-electron devices and their applications

The goal of this paper is to review in brief the basic physics of single-election devices, as well as their-current and prospective applications. These devices based on the controllable transfer of single electrons between small conducting "islands", have already enabled several important scientific experiments. Several other applications of analog single-election devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.

[1]  H. Wong,et al.  CMOS scaling into the nanometer regime , 1997, Proc. IEEE.

[2]  D. Averin,et al.  Theory of single-electron charging of quantum wells and dots. , 1991, Physical review. B, Condensed matter.

[3]  Lu,et al.  Magnetic-field-induced crossover from 2e to e periodicity in the superconducting single-electron transistor. , 1996, Physical review. B, Condensed matter.

[4]  Torsten Henning,et al.  Coulomb blockade effects in anodized niobium nanostructures , 1997 .

[5]  James E. Lukens,et al.  Coulomb Blockade and Universal Scaling in Resistively Isolated Tunnel Junctions , 1998 .

[6]  Kris Kempa,et al.  Spontaneous polarization of electrons in quantum dashes , 1991 .

[7]  K. West,et al.  Single-electron capacitance spectroscopy of vertical quantum dots using a single-electron transistor , 1998, cond-mat/9805406.

[8]  Yayi Wei,et al.  EDGE STRIPS IN THE QUANTUM HALL REGIME IMAGED BY A SINGLE-ELECTRON TRANSISTOR , 1998 .

[9]  Wei Zheng,et al.  Fabrication and characterization of single‐electron transistors and traps , 1994 .

[10]  S. Laux,et al.  Understanding hot‐electron transport in silicon devices: Is there a shortcut? , 1995 .

[11]  Birk,et al.  Shot-Noise Suppression in the Single-Electron Tunneling Regime. , 1995, Physical review letters.

[12]  Stephen Y. Chou,et al.  Single hole quantum dot transistors in silicon , 1995 .

[13]  Alexander B. Zorin,et al.  Quantum‐statistical theory of microwave detection using superconducting tunnel junctions , 1986 .

[14]  Jaw-Shen Tsai,et al.  Spectroscopy of Energy-Level Splitting between Two Macroscopic Quantum States of Charge Coherently Superposed by Josephson Coupling , 1997 .

[15]  M Pepper,et al.  High-frequency single-electron transport in a quasi-one-dimensional GaAs channel induced by surface acoustic waves , 1996, Journal of physics. Condensed matter : an Institute of Physics journal.

[16]  Yasuo Takahashi,et al.  Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates , 1996 .

[17]  A. B. Zorin,et al.  Simultaneous Bloch and Josephson Oscillations, and Resistance Quantizations in Small Superconducting Double Junctions , 1987 .

[18]  Yasuo Takahashi,et al.  Fabrication technique for Si single-electron transistor operating at room temperature , 1995 .

[19]  Nagaev Ke,et al.  Influence of electron-electron scattering on shot noise in diffusive contacts. , 1995 .

[20]  Michel Devoret,et al.  Passing Electrons One By One: Is a lo-* Accuracy Acluevable? , 1993 .

[21]  Kazuo Yano,et al.  Room-temperature single-electron memory , 1994 .

[22]  Konstantin K. Likharev,et al.  Superconductors speed up computation , 1997 .

[23]  T. Ohshima,et al.  Operation of bistable phase‐locked single‐electron tunneling logic elements , 1996 .

[24]  L. A. Openov,et al.  Single-electron computing without dissipation , 1997 .

[25]  R. A. Kiehl,et al.  Bistable Locking of Single-Electron Tunneling Junctions for Digital Circuitry , 1995 .

[26]  K. Likharev Single-electron transistors: Electrostatic analogs of the DC SQUIDS , 1987 .

[27]  B. Su,et al.  Resonant Tunneling in the Quantum Hall Regime: Measurement of Fractional Charge , 1995, Science.

[28]  Siegfried Selberherr,et al.  SIMON-A simulator for single-electron tunnel devices and circuits , 1997, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[29]  K. Yano,et al.  A 3-D single-electron-memory cell structure with 2F/sup 2/ per bit , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[30]  K. Likharev,et al.  Nanoscale field-effect transistors: An ultimate size analysis , 1997, cond-mat/9706026.

[31]  Alexander N. Korotkov Charge sensitivity of superconducting single‐electron transistor , 1996 .

[32]  Kazumasa Nomoto,et al.  Novel logic device using coupled quantum dots , 1993 .

[33]  Konstantin K. Likharev,et al.  Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctions , 1986 .

[34]  K. Likharev,et al.  Dynamics of Josephson Junctions and Circuits , 1986 .

[35]  D. Dimaria,et al.  Graded or stepped energy band‐gap‐insulator MIS structures (GI‐MIS or SI‐MIS) , 1979 .

[36]  J. Pekola,et al.  Thermometry by arrays of tunnel junctions. , 1994, Physical review letters.

[37]  Cleland,et al.  Influence of the environment on the Coulomb blockade in submicrometer normal-metal tunnel junctions. , 1992, Physical review. B, Condensed matter.

[38]  C. Gorter,et al.  A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths , 1951 .

[39]  Wei Zheng,et al.  Observation of strong Coulomb blockade in resistively isolated tunnel junctions , 1998 .

[40]  B. Su,et al.  Observation of Single-Electron Charging in Double-Barrier Heterostructures , 1992, Science.

[41]  D. Esteve,et al.  Obervation directe de la quantification de la charge macroscopique : une expérience de Millikan dans un dispositif électronique submicronique , 1992 .

[42]  A. A. Odintsov,et al.  Macroscopic quantum tunneling of the electric charge in small tunnel junctions , 1989 .

[43]  M. Tinkham,et al.  Gate-Voltage Studies of Discrete Electronic States in Aluminum Nanoparticles , 1997 .

[44]  Fulton,et al.  Determination of Coulomb-blockade resistances and observation of the tunneling of single electrons in small-tunnel-junction circuits. , 1991, Physical review letters.

[45]  Ivar Giaever,et al.  Tunneling, Zero-Bias Anomalies, and Small Superconductors , 1969 .

[46]  Han,et al.  Measurement of single electron lifetimes in a multijunction trap. , 1994, Physical review letters.

[47]  T. Honda,et al.  Shell Filling and Spin Effects in a Few Electron Quantum Dot. , 1996, Physical review letters.

[48]  Konstantin K. Likharev,et al.  Analysis of Q0-Independent Single-Electron Systems , 1998, VLSI Design.

[49]  Minoru Fujishima,et al.  A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation , 1999 .

[50]  Alexander N. Korotkov,et al.  Arrays of normal metal tunnel junctions in weak Coulomb blockade regime , 1995 .

[51]  J. P. Gordon,et al.  Multiphoton Process Observed in the Interaction of Microwave Fields with the Tunneling between Superconductor Films , 1963 .

[52]  Michel Devoret,et al.  HOW IS THE COULOMB BLOCKADE SUPPRESSED IN HIGH-CONDUCTANCE TUNNEL JUNCTIONS? , 1998 .

[53]  Yasunobu Nakamura,et al.  Metallic resistively coupled single-electron transistor , 1999 .

[54]  H. V. Houten,et al.  Coulomb-Blockade Oscillations in Semiconductor Nanostructures , 1992, cond-mat/0508454.

[55]  Marc J. Feldman,et al.  Quantum detection at millimeter wavelengths , 1985 .

[56]  Yoshihito Amemiya,et al.  Single-Electron Majority Logic Circuits , 1997 .

[57]  Esteve,et al.  Effect of the electromagnetic environment on the Coulomb blockade in ultrasmall tunnel junctions. , 1990, Physical review letters.

[58]  Nazarov,et al.  Single-electron charging of a superconducting island. , 1992, Physical review letters.

[59]  Barenco,et al.  Conditional Quantum Dynamics and Logic Gates. , 1995, Physical review letters.

[60]  Patel,et al.  Statistics and parametric correlations of Coulomb blockade peak fluctuations in quantum dots. , 1996, Physical review letters.

[61]  Yayi Wei,et al.  Single-electron transistor as an electrometer measuring chemical potential variations , 1997 .

[62]  Martinis,et al.  Even-odd asymmetry of a superconductor revealed by the Coulomb blockade of Andreev reflection. , 1993, Physical review letters.

[63]  K. Likharev Correlated discrete transfer of single electrons in ultrasmall tunnel junctions , 1988 .

[64]  Vwani P. Roychowdhury,et al.  On computing with locally-interconnected architectures in atomic/nanoelectronic systems , 1997, Proceedings IEEE International Conference on Application-Specific Systems, Architectures and Processors.

[65]  C. Beenakker Random-matrix theory of quantum transport , 1996, cond-mat/9612179.

[66]  Tarucha,et al.  Excitation spectra of circular, few-electron quantum dots , 1997, Science.

[67]  Waugh,et al.  Measuring interactions between tunnel-coupled quantum dots. , 1996, Physical review. B, Condensed matter.

[68]  Supriyo Bandyopadhyay,et al.  Supercomputing with spin-polarized single electrons in a quantum coupled architecture , 1994 .

[69]  Sandip Tiwari,et al.  Fast and long retention-time nano-crystal memory , 1996 .

[70]  Robert M. Westervelt,et al.  Cryogenic field‐effect transistor with single electronic charge sensitivity , 1994 .

[71]  Mikko Paalanen,et al.  Numerical investigation of one‐dimensional tunnel junction arrays at temperatures above the Coulomb blockade regime , 1996 .

[72]  T. Claeson,et al.  Gain dependence of the noise in the single electron transistor , 1998, cond-mat/9806354.

[73]  Alexey Bezryadin,et al.  Electrostatic trapping of single conducting nanoparticles between nanoelectrodes , 1997 .

[74]  Naoki Yokoyama,et al.  Room temperature operation of Si single-electron memory with self-aligned floating dot gate , 1997 .

[75]  Michel Devoret,et al.  Frequency-locked turnstile device for single electrons , 1990 .

[76]  Konstantin K. Likharev,et al.  Single‐electron transistor logic , 1996 .

[77]  D. V. Averin,et al.  Adiabatic quantum computation with Cooper pairs , 1998 .

[78]  F. Capasso,et al.  New floating-gate AlGaAs/GaAs memory devices with graded-gap electron injector and long retention times , 1988, IEEE Electron Device Letters.

[79]  Konstantin K. Likharev,et al.  Single Electronics: A Correlated Transfer of Single Electrons and Cooper Pairs in Systems of Small Tunnel Junctions , 1991 .

[80]  A. N. Korotkov,et al.  SINGLE-ELECTRON-PARAMETRON-BASED LOGIC DEVICES , 1998 .

[81]  Korotkov Intrinsic noise of the single-electron transistor. , 1994, Physical review. B, Condensed matter.

[82]  Konstantin K. Likharev,et al.  MULTIPLE-JUNCTION SINGLE-ELECTRON TRANSISTORS FOR DIGITAL APPLICATIONS , 1998 .

[83]  N. C. van der Vaart,et al.  Photon Sidebands of the Ground State and First Excited State of a Quantum Dot , 1997 .

[84]  Yasunobu Nakamura,et al.  Observation of photon-assisted Josephson-quasiparticle current , 1996 .

[85]  D. DiVincenzo,et al.  Quantum computation with quantum dots , 1997, cond-mat/9701055.

[86]  Bernd Spangenberg,et al.  77 K single electron transistors fabricated with 0.1 μm technology , 1997 .

[87]  Oded Millo,et al.  Single electron tunneling and level spectroscopy of isolated C60 molecules , 1997 .

[88]  Vwani P. Roychowdhury,et al.  Computational Paradigms in Nanoelectronics: Quantum Coupled Single Electron Logic and Neuromorphic Networks , 1996 .

[89]  M. Pepper Single Electron Phenomena in Semiconductor Structures , 2001 .

[90]  R. Schoelkopf,et al.  A concept for a submillimeter-wave single-photon counter , 1999, IEEE Transactions on Applied Superconductivity.

[91]  N. C. van der Vaart,et al.  Changes in the magnetization of a double quantum dot , 1998 .

[92]  Kazuhiko Matsumoto,et al.  Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperature , 1998 .

[93]  Esteve,et al.  Observation of parity-induced suppression of Josephson tunneling in the superconducting single electron transistor. , 1994, Physical review letters.

[94]  Mooij,et al.  Observation of macroscopic quantum tunneling through the Coulomb energy barrier. , 1990, Physical review letters.

[95]  Gert-Ludwig Ingold,et al.  Charge Tunneling Rates in Ultrasmall Junctions , 1992 .

[96]  Konstantin K. Likharev,et al.  Possible performance of capacitively coupled single‐electron transistors in digital circuits , 1995 .

[97]  R. Schoelkopf,et al.  The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer , 1998, Science.

[98]  Ralph,et al.  Spectroscopy of the superconducting gap in individual nanometer-scale aluminum particles. , 1996, Physical review letters.

[99]  Jaw-Shen Tsai,et al.  Aluminum single-electron nonvolatile floating gate memory cell , 1997 .

[100]  M. Ancona Design of computationally useful single-electron digital circuits , 1996 .

[101]  Haviland,et al.  Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation. , 1996, Physical review. B, Condensed matter.

[102]  Karl Hess,et al.  Single‐electron Coulomb exclusion on the atomic level , 1994 .

[103]  Ashok K. Sharma,et al.  Semiconductor Memories , 1997 .

[104]  Toshiro Hiramoto,et al.  Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate , 1996 .

[105]  K. Segawa,et al.  Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiO x / Ti system , 1996 .

[106]  J. E. Mooij,et al.  Fabrication of multilayer single‐electron tunneling devices , 1995 .

[107]  K. E. Nagaev,et al.  On the shot noise in dirty metal contacts , 1992 .

[108]  Edwin R. Williams,et al.  Application of Single Electron Tunneling: Precision Capacitance Ratio Measurements , 1995 .

[109]  K. K. Likharev,et al.  Single-electron traps: A quantitative comparison of theory and experiment , 1997 .

[110]  A. A. Odintsov,et al.  Ultimate accuracy of single‐electron dc current standards , 1993 .

[111]  Christoph Wasshuber,et al.  A single-electron device and circuit simulator , 1997 .

[112]  D. V. Averin,et al.  Effect of Screening on Shot Noise in Diffusive Mesoscopic Conductors , 1997 .

[113]  Stephen Y. Chou,et al.  A Silicon Single-Electron Transistor Memory Operating at Room Temperature , 1997, Science.

[114]  Konstantin K. Likharev,et al.  Single-Electron Transistors as Ultrasensitive Electrometers , 1992 .

[115]  R. P. Andres,et al.  Coulomb Staircase at Room Temperature in a Self-Assembled Molecular Nanostructure , 1996, Science.

[116]  Vladimir A. Krupenin,et al.  Instability of single-electron memory at low temperatures in Al/AlOx/Al structures , 1997 .

[117]  Yoshihito Amemiya,et al.  Single-electron logic device based on the binary decision diagram , 1997 .

[118]  Wolf,et al.  Background charge noise in metallic single-electron tunneling devices. , 1996, Physical review. B, Condensed matter.

[119]  Yasuo Takahashi,et al.  OBSERVATION OF SINGLE ELECTRON-HOLE RECOMBINATION AND PHOTON-PUMPED CURRENT IN AN ASYMMETRIC SI SINGLE-ELECTRON TRANSISTOR , 1997 .

[120]  Jensen,et al.  Accuracy of the electron pump. , 1992, Physical review. B, Condensed matter.

[121]  Weis,et al.  Single-electron tunneling through a double quantum dot: The artificial molecule. , 1996, Physical review. B, Condensed matter.

[122]  Tinkham,et al.  Experimental evidence for parity-based 2e periodicity in a superconducting single-electron tunneling transistor. , 1992, Physical review letters.

[123]  V. Semenov,et al.  RSFQ logic/memory family: a new Josephson-junction technology for sub-terahertz-clock-frequency digital systems , 1991, IEEE Transactions on Applied Superconductivity.

[124]  Loren Pfeiffer,et al.  Scanning Single Electron Transistor Microscopy: Imaging Individual Charges , 1998 .

[125]  Calvin F. Quate,et al.  Charge storage in a nitride‐oxide‐silicon medium by scanning capacitance microscopy , 1991 .

[126]  K. Likharev,et al.  A NUMERICAL STUDY OF THE DYNAMICS AND STATISTICS OF SINGLE ELECTRON SYSTEMS , 1995 .

[127]  Yoshihito Amemiya,et al.  Single-Electron Logic Systems Based on the Binary Decision Diagram , 1998 .

[128]  A. Korotkov Coulomb Blockade and Digital Single-Electron Devices , 1996, cond-mat/9602165.

[129]  K. Yano,et al.  A 128 Mb early prototype for gigascale single-electron memories , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[130]  Minoru Fujishima,et al.  Single-Electron Circuit Simulation , 1998 .

[131]  Michel Devoret,et al.  Single electron pump fabricated with ultrasmall normal tunnel junctions , 1991 .

[132]  L. Kuzmin,et al.  Single electron tunnelling oscillations in a current-biased Josephson junction , 1994 .

[133]  Konstantin K. Likharev,et al.  A numerical study of the accuracy of single‐electron current standards , 1996 .

[134]  P. D. Tougaw,et al.  A device architecture for computing with quantum dots , 1997, Proc. IEEE.

[135]  Toshio Ohshima Stability of binary logic tunneling phase states in dc‐biased and ac‐pumped single‐electron tunnel junctions , 1996 .

[136]  Kastner,et al.  Single-electron charging and periodic conductance resonances in GaAs nanostructures. , 1990, Physical review letters.

[137]  Konstantin K. Likharev,et al.  Experimental evidence for the Coulomb blockade of Cooper pair tunneling and Bloch oscillations in single Josephson junctions , 1991 .

[138]  Kazuo Nakazato,et al.  Enhancement of Coulomb blockade in semiconductor tunnel junctions , 1995 .

[139]  Yasunobu Nakamura,et al.  100-K Operation of Al-Based Single-Electron Transistors , 1996 .

[140]  Sandip Tiwari,et al.  Single charge and confinement effects in nano-crystal memories , 1996 .

[141]  Andrew Cleland,et al.  Very low noise photodetector based on the single electron transistor , 1992 .

[142]  Akira Toriumi,et al.  Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K , 1995 .

[143]  Konstantin K. Likharev,et al.  Observation of the Correlated Discrete Single-Electron Tunneling , 1987 .

[144]  Christian Schönenberger,et al.  Single-Electron Tunnelling Observed At Room Temperature by Scanning-Tunnelling Microscopy , 1992 .

[145]  J. E. Mooij,et al.  Broadband single‐electron tunneling transistor , 1996 .

[146]  G. Schoen,et al.  Quantum Manipulations of Small Josephson Junctions , 1997, cond-mat/9706016.

[147]  Y. Wang,et al.  Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K , 1995 .

[148]  P. D. Tougaw,et al.  Logical devices implemented using quantum cellular automata , 1994 .

[149]  I. A. Devyatov,et al.  Photoresponse and photosensitivity of single-electron-tunneling systems , 1994 .

[150]  J. Niemeyer,et al.  Noise in Al single electron transistors of stacked design , 1998, cond-mat/9804197.

[151]  S. I. Serdyukova,et al.  Single-electron tunnel junction array: an electrostatic analog of the Josephson transmission line , 1989 .

[152]  William D. Brown,et al.  Nonvolatile Semiconductor Memory Technology , 1997 .

[153]  Konstantin K. Likharev,et al.  Correlated Single Electron Tunneling In Ultrasmall Junctions , 1991 .

[154]  Dolan,et al.  Observation of single-electron charging effects in small tunnel junctions. , 1987, Physical review letters.

[155]  Haroon Ahmed,et al.  Coulomb blockade in a silicon tunnel junction device , 1994 .

[156]  Esteve,et al.  Measurement of the even-odd free-energy difference of an isolated superconductor. , 1993, Physical review letters.

[157]  U. Meirav,et al.  Single-electron phenomena in semiconductors , 1996 .

[158]  Arkady V. Krasheninnikov,et al.  Elementary quantum-dot gates for single-electron computing , 1996 .

[159]  K. K. Likharev,et al.  Electron‐electron interaction in linear arrays of small tunnel junctions , 1995 .

[160]  Nazarov,et al.  Resonant tunneling through two discrete energy states. , 1995, Physical review letters.

[161]  Kazuhiko Matsumoto,et al.  Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system , 1996 .

[162]  D. V. Averin,et al.  Shot noise in diffusive conductors: A quantitative analysis of electron-phonon interaction effects , 1998 .

[163]  P. Joyez,et al.  Two-electron quantization of the charge on a superconductor , 1993, Nature.

[164]  Michael J. Berry,et al.  Single-electron charging in double and triple quantum dots with tunable coupling. , 1995, Physical review letters.

[165]  Michel Devoret,et al.  Passing electrons one by one: is a 10/sup -8/ accuracy achievable? , 1993 .

[166]  G. J. Dolan,et al.  Offset masks for lift‐off photoprocessing , 1977 .

[167]  Dmitri V. Averin,et al.  Macroscopic Quantum Tunneling of Charge and Co-Tunneling , 1992 .

[168]  A Paul Alivisatos,et al.  A single-electron transistor made from a cadmium selenide nanocrystal , 1997, Nature.

[169]  James E. Lukens,et al.  Interband Transitions and Band Gap Measurements in Bloch Transistors , 1997 .

[170]  A. C. Gossard,et al.  Statistics of Coulomb Blockade Peak Spacings , 1998 .

[171]  Alexander N. Korotkov,et al.  Correlated single-electron tunneling via mesoscopic metal particles: Effects of the energy quantization , 1990 .

[172]  Ralph,et al.  Spectroscopic measurements of discrete electronic states in single metal particles. , 1995, Physical review letters.

[173]  C. A. Neugebauer,et al.  Electrical Conduction Mechanism in Ultrathin, Evaporated Metal Films , 1962 .

[174]  Wolfgang Porod,et al.  Quantum cellular automata , 1994 .

[175]  Konstantin K. Likharev,et al.  Single-Electron Parametron: Reversible Computation in a Discrete-State System , 1996, Science.

[176]  Michel Devoret,et al.  Single Charge Tunneling , 1992 .

[177]  C. Beenakker,et al.  Theory of Coulomb-blockade oscillations in the conductance of a quantum dot. , 1991, Physical review. B, Condensed matter.

[178]  Magnus Willander,et al.  Modelling and design of quantum dot cellular automata , 1998 .

[179]  D. L. Klein,et al.  An approach to electrical studies of single nanocrystals , 1996 .

[180]  T. Eiles,et al.  Noise in the Coulomb blockade electrometer , 1992 .

[181]  West,et al.  Single-electron capacitance spectroscopy of discrete quantum levels. , 1992, Physical review letters.

[182]  Konstantin K. Likharev,et al.  Accuracy of the single‐electron pump using an optimized step‐like rf drive waveform , 1996 .

[183]  Konstantin K. Likharev,et al.  M ay 1 99 8 Single-electron-parametron-based logic devices , 1998 .

[184]  Delsing,et al.  Time-correlated single-electron tunneling in one-dimensional arrays of ultrasmall tunnel junctions. , 1989, Physical review letters.

[185]  Paul L. McEuen,et al.  Single-Electron Transport in Ropes of Carbon Nanotubes , 1997, Science.

[186]  John R. Tucker,et al.  Complementary digital logic based on the ``Coulomb blockade'' , 1992 .

[187]  A. N. Korotkov Theoretical analysis of the resistively coupled single-electron transistor , 1998 .

[188]  Alexander B. Zorin,et al.  Theory of the Bloch-wave oscillations in small Josephson junctions , 1985 .

[189]  Leonid Kuzmin,et al.  Observation of the bloch oscillations in an ultrasmall Josephson junction , 1991 .

[190]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[191]  A. Korotkov Wireless single‐electron logic biased by alternating electric field , 1995 .

[192]  K. K. Likharev,et al.  Shot noise of single-electron tunneling in one-dimensional arrays , 1998 .

[193]  Brown,et al.  Coulomb Blockade as a Noninvasive Probe of Local Density of States. , 1996, Physical review letters.

[194]  John M. Martinis,et al.  Accuracy of electron counting using a 7‐junction electron pump , 1996 .

[195]  Alexander N. Korotkov,et al.  One dimensional arrays and solitary tunnel junctions in the weak coulomb blockade regime: CBT thermometry , 1997 .

[196]  Konstantin K. Likharev,et al.  Layered tunnel barriers for nonvolatile memory devices , 1998 .

[197]  Kazuo Yano,et al.  for Giga-to-Tera Bit Storage , 1996 .

[198]  M. Devoret,et al.  Direct observation of macroscopic charge quantization , 1991 .

[199]  Meir,et al.  Transport spectroscopy of a Coulomb island in the quantum Hall regime. , 1991, Physical review letters.

[200]  Robert I. Shekhter,et al.  Kinetic phenomena and charge discreteness effects in granulated media , 1975 .

[201]  K. Matsumoto STM/AFM nano-oxidation process to room-temperature-operated single-electron transistor and other devices , 1997, Proc. IEEE.

[202]  Nazarov,et al.  Photon-assisted tunneling through a quantum dot. , 1994, Physical review. B, Condensed matter.

[203]  Kazumasa Nomoto,et al.  Single electron–photon logic device using coupled quantum dots: Computation with the Fock ground state , 1996 .

[204]  H. Dai,et al.  Individual single-wall carbon nanotubes as quantum wires , 1997, Nature.

[205]  Konstantin K. Likharev,et al.  Possible Applications of the Single Charge Tunneling , 1992 .

[206]  Michael Tinkham,et al.  Introduction to Superconductivity , 1975 .

[207]  Yoshihito Amemiya,et al.  Cellular-Automaton Circuits Using Single-Electron-Tunneling Junctions , 1997 .

[208]  A. N. Korotkov,et al.  Room temperature molecular single-electron transistor , 1996 .

[209]  P. D. Tougaw,et al.  Dynamic behavior of quantum cellular automata , 1996 .

[210]  Sandip Tiwari,et al.  A silicon nanocrystals based memory , 1996 .

[211]  L. N. Pfeiffer,et al.  Periodic and Aperiodic Bunching in the Addition Spectra of Quantum Dots , 1997 .

[212]  David B. Haviland,et al.  NOISE MEASUREMENTS OF SINGLE ELECTRON TRANSISTORS USING A TRANSIMPEDANCE AMPLIFIER , 1999 .

[213]  A. N. Korotkov,et al.  Shot-noise suppression in multimode ballistic Fermi conductors , 1999 .

[214]  John Lambe,et al.  Charge-Quantization Studies Using a Tunnel Capacitor , 1969 .

[215]  Oded Millo,et al.  Tunneling spectroscopy of isolated C 60 molecules in the presence of charging effects , 1997 .