Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly lattice-matched InAlN/AlN/GaN structures. A nonmonotonous dependence of the LO-phonon lifetime on the supplied electric power is reported for the first time and explained in terms of plasmon–LO-phonon resonance tuned by applied bias at a fixed sheet density (8×1012 cm−2). The shortest lifetime of 30±15 fs is found at the power of 20±10 nW/electron.

[1]  A Dyson Phonon-plasmon coupled modes in GaN. , 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

[2]  Hadis Morkoç,et al.  Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density , 2006 .

[3]  J. Liberis,et al.  Optimal 2 DEG Density for Plasmon‐Assisted Ultrafast Decay of Hot Phonons , 2009 .

[4]  K T Tsen,et al.  Studies of electron-phonon and phonon-phonon interactions in InN using ultrafast Raman spectroscopy. , 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

[5]  H. Morkoç,et al.  InAlN‐barrier HFETs with GaN and InGaN channels , 2009 .

[6]  H. Morkoç,et al.  Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields , 2009 .

[7]  Hadis Morkoç,et al.  Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels , 2008 .

[8]  Hadis Morko,et al.  Handbook of Nitride Semiconductors and Devices , 2008 .

[9]  Michael J. Uren,et al.  Direct optical measurement of hot-phonons in active AlGaN/GaN devices , 2008 .

[10]  A. Allerman,et al.  High field transport in GaN/AlGaN heterostructures , 2004 .

[11]  Arvydas Matulionis,et al.  Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel , 2010, Proceedings of the IEEE.

[12]  M. Singh,et al.  Velocity overshoot effects and scaling issues in III-V nitrides , 2005, IEEE Transactions on Electron Devices.

[13]  Jacob B. Khurgin,et al.  Hot phonon effect on electron velocity saturation in GaN: A second look , 2007 .

[14]  Lester F. Eastman,et al.  Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis , 2003 .

[15]  Arvydas Matulionis Ultrafast decay of non-equilibrium (hot) phonons in GaN-based 2DEG channels , 2009 .

[16]  J. Hayes,et al.  Phonon lifetimes in bulk AlN and their temperature dependence , 2000 .

[17]  E. Šermukšnis Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime , 2007 .

[18]  Hadis Morkoç,et al.  Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels , 2009, OPTO.

[19]  L. Eastman,et al.  Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures. , 2005, Physical review letters.

[20]  B. Ridley,et al.  The LO phonon lifetime in GaN , 1996 .

[21]  Hadis Morkoç,et al.  Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN , 1998 .

[22]  A. Matulionis,et al.  Hot phonons in GaN channels for HEMTs , 2006 .

[23]  W. Schaff,et al.  Phonon lifetimes and phonon decay in InN , 2005 .

[24]  Brian K. Ridley,et al.  Phonon-plasmon coupled-mode lifetime in semiconductors , 2008 .

[25]  A. Matulionis,et al.  GaN-based two-dimensional channels: hot-electron fluctuations and dissipation , 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

[26]  G. P. Srivastava Origin of the hot phonon effect in group-III nitrides , 2008 .

[27]  Hadis Morkoç,et al.  High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors , 2007 .