Enhanced Switching Stability in Forming‐Free SiNx Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure

[1]  Kate J. Norris,et al.  Nitride memristors , 2012 .

[2]  Hong Wang,et al.  Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices , 2017 .

[3]  Tae Geun Kim,et al.  Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors , 2011, IEEE Electron Device Letters.

[4]  Byung-Gook Park,et al.  Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. , 2018, Small.

[5]  H. Su,et al.  Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current , 2016 .

[6]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[7]  Sungho Kim,et al.  Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices , 2015 .

[8]  R. Luttge,et al.  Advances in 3D neuronal cell culture , 2015 .

[9]  Wen Wang,et al.  Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers , 2014 .

[10]  Martin Pfeiffer,et al.  Doping of organic semiconductors , 2013 .

[11]  Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories , 2012 .

[12]  Tae Geun Kim,et al.  Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films , 2015 .

[13]  Tae Geun Kim,et al.  Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment , 2011 .

[14]  F. Zeng,et al.  Recent progress in resistive random access memories: Materials, switching mechanisms, and performance , 2014 .

[15]  K. Kinoshita,et al.  Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystal , 2011 .

[16]  Byung-Gook Park,et al.  Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device. , 2017, Physical chemistry chemical physics : PCCP.

[17]  Ming-Jinn Tsai,et al.  Redox Reaction Switching Mechanism in RRAM Device With Structure , 2011 .

[18]  X. Ma,et al.  Influence of Nitrogen Concentration on Self‐Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices , 2018, physica status solidi (a).

[19]  S. Sze,et al.  The Effect of Silicon Oxide Based RRAM with Tin Doping , 2012 .

[20]  L. Goux,et al.  Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories , 2013 .

[21]  Yong-ning Zhou,et al.  Resistive‐switching behavior and mechanism in copper‐nitride thin films prepared by DC magnetron sputtering , 2012 .

[22]  Ling Xu,et al.  a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths , 2015, Scientific Reports.

[23]  Byung-Gook Park,et al.  Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x , 2017 .

[24]  Saptarshi Mandal,et al.  Switching dynamics and charge transport studies of resistive random access memory devices , 2012 .

[25]  Yuchao Yang,et al.  Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device , 2010 .