论文信息 - FET DROs at V-band

FET DROs at V-band

MESFET dielectric resonator oscillators (DROs) have been demonstrated at V-band. The first unit operates at 51.2 GHz with an output power as high as 9 dBm. The second unit operates at 65.6 GHz with an output power of 7.6 dBm. DC-to-RF efficiencies were 18% and 14%, respectively. Power variation is less than +or-0.25 dB over a temperature range from 0 to 50 degrees C. The stable output power over temperature makes this FET oscillator more attractive than its diode counterpart. The planar circuit structure employed in this oscillator can be implemented monolithically.<<ETX>>

W. Yau | Y. C. Shih | E. T. Watkins

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