论文信息 - InGaAsSb photovoltaic cells with enhanced open-circuit voltage

InGaAsSb photovoltaic cells with enhanced open-circuit voltage

Various Zn diffusion profiles in InGaAsSb photovoltaic cells with diffused emitters were experimentally studied. It was determined that strong built-in electric fields near the surface lead to a reduction of the saturation value of the injection (J/sub 01/) component of the dark current, and hence to the increase of the open-circuit voltage (V/sub oc/). A value of J/sub 01/ as low as 4.2/spl times/10/sup -6/ A/cm/sup 2/ and a value of V/sub oc/, as high as 344 mV at 3 A/cm/sup 2/ were measured.

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