论文信息 - 23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process - 字舞流文

23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process

A 23 GHz bandwidth is achieved with a pin/DHBT photoreceiver in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. This is the widest bandwidth yet reported for monolithic photoreceivers.

Eiichi Sano | Shoji Yamahata | M. Yoneyama | E. Sano | M. Yoneyama | Yutaka Matsuoka | S. Yamahata | Y. Matsuoka

[1] John E. Bowers,et al. InGaAs PIN photodetectors with modulation response to millimetre wavelengths , 1985 .

[2] Gadi Eisenstein,et al. Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode , 1986 .

[3] N. H. Sheng,et al. Monolithic ultrahigh-speed GaAs HBT optical integrated receivers , 1991, [1991] GaAs IC Symposium Technical Digest.

[4] S. Chandrasekhar,et al. High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure , 1993, IEEE Photonics Technology Letters.

[5] Eiichi Sano,et al. A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process , 1994 .

[6] J. Wieland,et al. Two-channel 5 Gbit/s silicon bipolar monolithic receiver for parallel optical interconnects , 1994 .