23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process
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Eiichi Sano | Shoji Yamahata | M. Yoneyama | E. Sano | M. Yoneyama | Yutaka Matsuoka | S. Yamahata | Y. Matsuoka
[1] John E. Bowers,et al. InGaAs PIN photodetectors with modulation response to millimetre wavelengths , 1985 .
[2] Gadi Eisenstein,et al. Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode , 1986 .
[3] N. H. Sheng,et al. Monolithic ultrahigh-speed GaAs HBT optical integrated receivers , 1991, [1991] GaAs IC Symposium Technical Digest.
[4] S. Chandrasekhar,et al. High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure , 1993, IEEE Photonics Technology Letters.
[5] Eiichi Sano,et al. A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process , 1994 .
[6] J. Wieland,et al. Two-channel 5 Gbit/s silicon bipolar monolithic receiver for parallel optical interconnects , 1994 .