Power Cycling Tests in High Temperature Conditions of SiC-MOSFET Power Modules and Ageing Assessment

Silicon carbide (SiC) MOSFETs power modules are very attractive devices. Despite technological progress, reliability remains an issue and reliability tests must be conducted to introduce more widely these devices into power systems. Because of trapping/de-trapping phenomena at the SiC/SiO2 interface that lead to the shift of threshold voltage, test protocols based on silicon components cannot be used as is, especially in high temperature conditions. Using high temperature SiC MOSFET power modules, we highlight the main experimental difficulties to perform power cycling tests (PCTs). As these reversible physical mechanisms preclude the use of temperature sensitive parameters (TSEP) for junction temperature measurements, we set up fiber temperature sensors for this purpose. Moreover, these degradation phenomena lead to difficulties in both controlling the test conditions and seeking for reliable aging indicator parameters. Finally, various results of power cycling tests with different gate bias conditions at high temperature are discussed in order to propose a test protocol

[1]  Aivars J. Lelis,et al.  Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs , 2015, IEEE Transactions on Electron Devices.

[2]  G. Breglio,et al.  Electro-thermal instability in low voltage power MOS: Experimental characterization , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

[3]  M. Melloch,et al.  Status and prospects for SiC power MOSFETs , 2002 .

[4]  J. Suehle,et al.  Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements , 2008, IEEE Transactions on Electron Devices.

[5]  J. Casady,et al.  Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs , 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

[6]  L. Dupont,et al.  Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review , 2012, IEEE Transactions on Power Electronics.

[7]  Ronald Green,et al.  Application of reliability test standards to SiC Power MOSFETs , 2011, 2011 International Reliability Physics Symposium.

[8]  Bruno Allard,et al.  State of the art of high temperature power electronics , 2009 .

[9]  Hiroshi Yano,et al.  Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants , 2011 .

[10]  Sei-Hyung Ryu,et al.  A New Degradation Mechanism in High-Voltage SiC Power MOSFETs , 2007, IEEE Electron Device Letters.

[11]  Ranbir Singh,et al.  Reliability and performance limitations in SiC power devices , 2006, Microelectron. Reliab..