论文信息 - A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime

A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime

The paper presents a novel technique to evaluate the noise of semiconductor devices under large-signal, (quasi) periodic operation through the extension of the Impedance Field Method (IFM). A numerical implementation within the framework of a drift-diffusion model is discussed making use of the Harmonic Balance (HB) technique applied to the carrier and potential distributions, and the approach is validated through the noise analysis of a varactor diode RF frequency doubler.

G. Ghione | M. Pirola | F. Bonani | S. Donati Guerrieri

[1] Franco Mastri,et al. General noise analysis of nonlinear microwave circuits by the piecewise harmonic-balance technique , 1994 .

[2] J. Nougier. Fluctuations and noise of hot carriers in semiconductor materials and devices , 1994 .

[3] Fabrizio Bonani,et al. An efficient approach to noise analysis through multidimensional physics-based models , 1998 .

[4] W. Heinrich,et al. High-frequency FET noise performance: a new approach , 1989 .

[5] F. Sauter,et al. Quantum Theory of Atoms, Molecules and the Solid State , 1968 .

[6] C. Dragone. Analysis of thermal and shot noise in pumped resistive diodes , 1968 .

[7] Stephen A. Maas,et al. Nonlinear microwave circuits , 1988 .