The microstructure and X-ray reflectivity of Mo/Si multilayers

Abstract We have studied microstructure Mo/Si multilayers grown by RF and DC sputtering at different deposition parameters by cross-sectional transmission electron microscopy and X-ray reflectivity for the wavelength 13.4 nm and 0.154 nm. It is shown experimentally that reflection properties of mirrors are determined by the crystalline state of molybdenum layers. The results are compared for the different samples and discussed in view of the choice an optimal deposition parameters to produce multilayers with a high X-ray reflectivity for the λ=13.4 nm.

[1]  Charles M. Falco,et al.  Interfaces in Mo/Si multilayers , 1991, Optics & Photonics.

[2]  Shapiro,et al.  Growth of molybdenum on silicon: Structure and interface formation. , 1991, Physical review. B, Condensed matter.

[3]  Norman G. Einspruch,et al.  Vlsi Electronics: Microstructure Science , 1982 .

[4]  R. Sinclair,et al.  Interfacial reactions on annealing molybdenum‐silicon multilayers , 1989 .

[5]  J. Bläsing,et al.  Structural investigations on ultrathin Mo layers in a-Si:H with emphasis on the island–continuous layer transition , 1999 .

[6]  Donald W. Sweeney,et al.  EUV optical design for a 100-nm CD imaging system , 1998, Advanced Lithography.

[7]  D. Adams,et al.  Microstructure and residual stress of very thin Mo films , 1995 .

[8]  Shyam P Murarka,et al.  Silicides for VLSI Applications , 1983 .

[9]  N. Ceglio,et al.  High‐resolution electron microscopy study of x‐ray multilayer structures , 1987 .

[10]  N. Ceglio,et al.  Thermally induced structural modification of Mo‐Si multilayers , 1990 .

[11]  F. Bijkerk,et al.  Temperature induced diffusion in Mo/Si multilayer mirrors , 1998 .

[12]  C. R. Hills,et al.  Structure and performance of Si/Mo multilayer mirrors for the extreme ultraviolet , 1994 .

[13]  M. Yanagihara,et al.  Characterization of a multilayer soft X-ray reflector fabricated by pulsed laser deposition , 1998 .

[14]  J. McCaffrey Small-angle cleavage of semiconductors for transmission electron microscopy , 1991 .

[15]  S. Bajt,et al.  Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers , 2001 .

[16]  L. J. Chen,et al.  Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures , 1996 .

[17]  D. Stearns,et al.  Optimization of Growth Conditions of Vapor Deposited Mo/Si Multilayers , 1992, Physics of X-Ray Multilayer Structures.

[18]  R. S. Rosen,et al.  Fabrication of high‐reflectance Mo–Si multilayer mirrors by planar‐magnetron sputtering , 1991 .

[19]  Meyerheim,et al.  Amorphous molybdenum silicide layers and Mo/Si(100) interface growth: Local structure and preparation dependence. , 1990, Physical review. B, Condensed matter.

[20]  H. Wendrock,et al.  Characterization of ultra smooth interfaces in Mo/Si-multilayers , 1995, Analytical and bioanalytical chemistry.

[21]  A. A. Fraerman,et al.  Determination of layered synthetic microstructure parameters , 1991 .

[22]  D. Stearns,et al.  Imaging x‐ray multilayer structures using cross‐sectional high resolution electron microscopy , 1992 .

[23]  L. A. Shmaenok,et al.  Multilayer optics for x-ray and γ radiation , 1998, Other Conferences.