Device modeling of ferroelectric memory field-effect transistor (FeMFET)

A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered. A new analytic expression for the relation of polarization versus electric field (P-E) is proposed to describe the nonsaturated hysteresis loop of the ferroelectric material. In order to provide a more accurate simulation, we incorporate the combined effects of the nonsaturated polarization of ferroelectric layers and the nonuniform distributions of electric field and charge along the channel. We also discuss the possible nonideal effects due to the fixed charges, charge injection, and short channel. The present theoretical work provides some new design rules for improving the performance of FeMFETs.

[1]  A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model , 2000 .

[2]  H. Ishiwara,et al.  Fabrication and Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi, La)4Ti3O12 Films , 2001 .

[3]  Paul J. McWhorter,et al.  Physics of the ferroelectric nonvolatile memory field effect transistor , 1992 .

[4]  Hiroshi Ishiwara,et al.  Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures , 2001 .

[5]  H. Ishiwara,et al.  Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures , 1997, IEEE Electron Device Letters.

[6]  J.M.C. Stork,et al.  The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs , 1999 .

[7]  Samuel Lee Miller,et al.  Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions , 1991 .

[8]  Tso-Ping Ma,et al.  Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure , 2002 .

[9]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[10]  P. V. Dressendorfer,et al.  Device modeling of ferroelectric capacitors , 1990 .

[11]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[12]  A. Sheikholeslami,et al.  A survey of circuit innovations in ferroelectric random-access memories , 2000, Proceedings of the IEEE.