GaN SPST MMIC switches based on HPF/LPF switching concept for high power applications

This paper describes the demonstrated GaN SPST MMIC switches based on HPF/LPF switching concept for high power applications. The developed MMIC switches indicate high isolation of more than 80-dB with insertion loss of better than 2-dB below 2.4 GHz. The effective chip size is 1.15 × 1.58 mm2. The measured P1dB of insertion loss is 31.2-dBm. The isolation varies with respect to the input power from about 80-dB at small signal operation to about 40-dB for large signal input. The possible cause is the change of average FET off capacitance. This MMIC switches with HPF/LPF switching concept promises to provide new switch products having high power handling capability with low cost.