论文信息 - Measurement of the onset of quasi-saturation in bipolar transistors

Measurement of the onset of quasi-saturation in bipolar transistors

Abstract The onset of quasi-saturation in a bipolar transistor is accompanied by hFE- and fT-fall-off and by an increase in h.f. distortion (intermodulation and cross-modulation). We show that the boundary between normal and quasi-saturated operation is easily established experimentally by measuring the l.f. third harmonics of the collector current, as a function of bias voltage and current. Examples are given for ohmic, tepid and hot carrier current flow in the epitaxial collector region.

H. C. de Graaff | H. C. Graaff | R. van der Wal | R. V. D. Wal

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