Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge

Modern wide-bandgap devices, such as SiC- or GaN-based devices, feature significantly reduced switching losses, and the question arises if soft-switching operating modes are still beneficial. For most of the semiconductor devices, only limited information is available to estimate the switching losses. Especially, if a wide operating range is desired, excessive measurements have to be performed to determine the switching losses for arbitrary operating points. Therefore, in this paper, a fast calculation method to determine the switching losses based on the charge equivalent approximation of the mosfet capacitances, relying only on datasheet parameters, is presented. In addition, the turn-off losses at high switching currents are investigated, and an analytical expression to estimate the maximum current range for which the mosfet can be turned off with negligible switching losses is proposed.

[1]  W. Eberle,et al.  A Practical Switching Loss Model for Buck Voltage Regulators , 2009, IEEE Transactions on Power Electronics.

[2]  Roman Bosshard,et al.  Multi-Objective Optimization of Inductive Power Transfer Systems for EV Charging , 2015 .

[3]  Johann W. Kolar,et al.  Accurate transient calorimetric measurement of soft-switching losses of 10kV SiC MOSFETs , 2016, 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG).

[4]  F.C. Lee,et al.  Analytical loss model of power MOSFET , 2006, IEEE Transactions on Power Electronics.

[5]  K. Sun,et al.  Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range , 2014, IEEE Transactions on Power Electronics.

[6]  W. Marsden.  I and J , 2012 .

[7]  Yaogang Hu,et al.  Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off , 2017 .

[8]  Malik Elbuluk,et al.  Fundamentals of Power Electronics , 2013 .

[9]  Ralph M. Burkart,et al.  ZVS of Power MOSFETs Revisited , 2016, IEEE Transactions on Power Electronics.

[10]  J. B. Fedison,et al.  COSS hysteresis in advanced superjunction MOSFETs , 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

[11]  T. Meynard,et al.  High Current Ripple for Power Density and Efficiency Improvement in Wide Bandgap Transistor-Based Buck Converters , 2015, IEEE Transactions on Power Electronics.

[12]  Danna Zhou,et al.  d. , 1840, Microbial pathogenesis.

[13]  Jianjing Wang,et al.  Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance , 2013, IEEE Transactions on Power Electronics.

[14]  Y. C. Kao,et al.  Correlations between reverse recovery time and lifetime of p-n junction driven by a current ramp , 1970 .

[15]  R. Burgos,et al.  Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs , 2009, 2009 IEEE Energy Conversion Congress and Exposition.

[16]  P. O. Lauritzen,et al.  Modeling of power diodes with the lumped-charge modeling technique , 1997 .

[17]  P. O. Lauritzen,et al.  A simple diode model with reverse recovery , 1991 .

[18]  J. B. Fedison,et al.  Coss related energy loss in power MOSFETs used in zero-voltage-switched applications , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[19]  J. W. Kolar,et al.  Interleaved Triangular Current Mode (TCM) resonant transition, single phase PFC rectifier with high efficiency and high power density , 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

[20]  Thierry Meynard,et al.  Accurate switching energy estimation of parallel eGaN FETs for modern aircraft applications , 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

[21]  Robert Perret,et al.  Power electronics semiconductor devices , 2009 .

[22]  D. G. Lamar,et al.  An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model , 2010, IEEE Transactions on Power Electronics.

[23]  Johan Driesen,et al.  Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters , 2016, IEEE Transactions on Power Electronics.

[24]  Sei-Hyung Ryu,et al.  Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence , 2007, IEEE Transactions on Power Electronics.

[25]  Uwe Badstübner,et al.  Ultra-high performance telecom DC-DC converter , 2012 .

[26]  M. Egan,et al.  Parasitic inductance effect on switching losses for a high frequency Dc-Dc converter , 2008, 2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition.

[27]  H. Shah,et al.  Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics , 2004, Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04..

[28]  P. Lauritzen,et al.  A simple power diode model with forward and reverse recovery , 1991 .

[29]  J. Kolar,et al.  Ultra-Low-Inductance Power Module for Fast Switching Semiconductors , 2013 .