A single ended write double ended read decoupled 8-T SRAM cell with improved read stability and writability

In this paper a single ended write double ended read decoupled SRAM cell is proposed. Design metrics of the proposed cell are examined and compared with conventional 6-T. Proposed SRAM cell offer improvement during both read and write operation in terms of speed. It offers 2.95× shorter read delay. It exhibits 2.74× and 7.84× shorter write delay during write-1 and write-0 respectively. The proposed cell also shows improvement in read stability and writability. It offers 5.07× higher RSNM (read static noise margin). It shows 4.08% improvement in WSNM (write static noise margin) @ 300 mV compared to conventional 6-T.

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