论文信息 - Laser produced EUV light source development for HVM

Laser produced EUV light source development for HVM

We develop a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a short pulse, high power, high repetition rate CO2 master oscillator power amplifier (MOPA) laser system and a Tin droplet target. A maximum conversion efficiency of 4.5% was measured for a CO2 laser driven Sn plasma having a narrow spectrum at 13.5 nm. In addition, low debris generation was observed. The CO2 MOPA laser system is based on commercial high power cw CO2 lasers. We achieve an average laser power of 3 kW at 100 kHz with a single laser beam that has very good beam quality. In a first step, a 50-W light source is developing. Based on a 10-kW CO2 laser this light source is scalable to more than 100 W EUV in-band power.

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