A study on the time evolution of surface loss probability on hydrogenated amorphous silicon films in rf discharges using infrared diode-laser absorption spectroscopy

The time evolution of the surface loss probability of on hydrogenated amorphous silicon films at room temperature during and after turning off the discharge is deduced from the time evolution of the spatial profile of the absolute density of measured by infrared diode-laser absorption spectroscopy. Two methods are employed to derive the value of . One of them uses the density gradient near electrode surfaces and the other uses the decay of density after turning off the discharge. Both methods give a fairly consistent result that has a constant value of 0.15 during the discharge and the value decreases to 0.03 within about 8 ms of turning off the discharge. The decrease of after turning off the discharge may be attributed to a decrease in the rate of production of activated surface sites, on which radicals are chemisorbed.

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