论文信息 - Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures - 字舞流文

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

V. Chaldyshev | V. Preobrazhenskii | M. D. Vilisova | M. Putyato | B. Semyagin | L. G. Lavrent’eva | I. A. Bobrovnikova | S. Toropov