Punch-through IGBTs with homogeneous n-base operating at 4 kV line voltage

Insulated Gate Bipolar Transistors (IGBTs) for snubberless operation at 4 kV line voltage in inductively loaded circuits have been developed, fabricated and characterized. The key point in the development of these high voltage devices is the Punch-Through (PT) structure which makes use of homogeneous wafer material for the n-base layer combined with a buffer layer diffused from the backside instead of double epitaxial material conventionally used in PT structures. The anode is equipped with emitter shorts to reduce the switching losses. The on-state voltage of the IGBTs is between 2.2 V and 3.4 V at 100 A cm/sup -2/ dependent on the buffer layer implant dose. The leakage current of these devices is less than 8/spl middot/10/sup -6/ A cm/sup -2/ at 5 kV blocking voltage and at room temperature. It was demonstrated that these IGBTs are able to turn off a current density of 50 A cm/sup -2/ at a line voltage of 4 kV in about 5 /spl mu/s under inductive load without any snubber, thereby producing a turn-off energy density of 220 mJ cm/sup -2/.

[1]  Wolfgang Fichtner,et al.  New (super) self aligned MOS controlled thyristors, (S)SAMCTs, switching 20 A at 4 kV , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[2]  Wolfgang Fichtner,et al.  Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[3]  Wolfgang Fichtner,et al.  Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results , 1991 .

[4]  A. Goodman,et al.  Improved COMFETs with fast switching speed and high-current capability , 1983, 1983 International Electron Devices Meeting.

[5]  B. Jayant Baliga.  Power semiconductor devices for the 1990s , 1993 .

[6]  Wolfgang Fichtner,et al.  4.5 kV MCT with buffer layer and anode short structure , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[7]  B. J. Baliga,et al.  Modern Power Devices , 1987 .

[8]  J. Hudgins.  A review of modern power semiconductor devices , 1993 .

[9]  T. Laska,et al.  A 2000 V non-punchthrough IGBT with high ruggedness , 1992 .

[10]  Wolfgang Fichtner,et al.  Mixed-Mode Multi-Dimensional Device and Circuit Simulation , 1993 .

[11]  W. Fichtner,et al.  Turn-off failure mechanisms in large (2.2 kV, 20 A) MCT devices , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[12]  N. Iwamuro.  Numerical analysis of turn-off behavior of IGBT with an inductive load , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[13]  M. Kurata,et al.  Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO , 1984, 1984 International Electron Devices Meeting.

[14]  B. J. Baliga,et al.  Evolution of MOS-bipolar power semiconductor technology , 1988, Proc. IEEE.

[15]  Masahito Otsuki,et al.  The 3rd generation IGBT toward a limitation of IGBT performance , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[16]  Gerhard Miller,et al.  A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT , 1990, International Technical Digest on Electron Devices.