Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

[1]  F. Pool,et al.  Nitrogen plasma instabilities and the growth of silicon nitride by electron cyclotron resonance microwave plasma chemical vapor deposition , 1997 .

[2]  Andrey A. Voevodin,et al.  Combined magnetron sputtering and pulsed laser deposition of carbides and diamond‐like carbon films , 1996 .

[3]  Ion N. Mihailescu,et al.  Pulsed laser deposition of silicon nitride thin films by laser ablation of a Si target in low pressure ammonia , 1996, Journal of Materials Science.

[4]  J. M. Martín,et al.  Analysis of the oxygen contamination present in SiNx films deposited by electron cyclotron resonance , 1995 .

[5]  J. Chapple‐Sokol,et al.  Hydrogen incorporation in silicon nitride films deposited by remote electron‐cyclotron‐resonance chemical vapor deposition , 1995 .

[6]  Toshimichi Ito,et al.  Growth and characterization of thin SiN films grown on Si by electron cyclotron resonance nitrogen plasma treatment , 1993 .

[7]  Katsuaki Saito,et al.  Effects of Excited Species in Electron Cyclotron Resonance Plasma on SiN Film Resistivity , 1992 .

[8]  R. Jackman,et al.  Photochemical processing of electronic materials , 1991 .

[9]  Tsuneo Mitsuyu,et al.  Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method , 1989 .

[10]  A. Scharmann,et al.  IR transmittance studies of hydrogen-free and hydrogenated silicon nitride and silicon oxynitride films deposited by reactive sputtering , 1987 .

[11]  Y. Sakamoto,et al.  Experiment on the Anisotropy of Electron Temperature in ECR Plasma , 1987 .