Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices
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S. Cristoloveanu | W. Xiong | I.S. Esqueda | H.J. Barnaby | M.L. McLain | P.C. Adell | F.E. Mamouni | S.K. Dixit | R.D. Schrimpf
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