论文信息 - Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K) - 字舞流文

Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)

D. Drouin | S. Ecoffey | F. Alibart | Y. Beilliard | François Paquette | Fr'ed'eric Brousseau