InGaAs-GaAs strained-layer quantum well heterostructure lasers

InGaAs-GaAs strained layer quantum well heterostructure lasers offer availability of emission wavelengths in the range of 0.9-1.1 micron, otherwise largely inaccessible with semiconductor diode lasers. Here, InGaAs-GaAs strained layer lasers and laser arrays grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) are described. The growth conditions for preparing these strained layer structures by MOCVD are presented, and time zero characterization of oxide defined stripe broad area lasers is outlined as a function of InGaAs layer composition and thickness, relative to the critical thickness. Various structures, grown throughout the 0.9-1.1-micron wavelength range and having In mole fractions from x = 0 - 0.50, are shown to have low broad area threshold current densities (Jth less than 200 A/sq cm) and other characteristics of unstrained quantum well heterostructure lasers. Recent results indicating highly reliable CW operation of oxide stripe strained quantum well heterostructure lasers are reviewed.