Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing

Proton implantation followed by rapid thermal annealing (RTA) has been employed for the post-growth tuning of the band gap of molecular beam epitaxy grown InAs/GaAs quantum dots (QDs). To enhance QD intermixing, point defects are created by proton implantation at different doses (5 ? 1010?1014?cm?2) followed by rapid thermal annealing at 675??C for 30?s. Low-temperature photoluminescence (PL) measurements have shown that the proton-implantation-induced intermixing alters both the optical transition energies and the PL full width at half maximum (FWHM). A purely proton-implantation induced band gap tuning limit of 131?meV has been achieved for an implantation dose of 5 ? 1013?cm?2, keeping both the QDs' character and around 46% of the initial integrated PL intensity.

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