论文信息 - Improved contacts to semi‐insulating GaAs photoconductive switches using a graded layer of InGaAs

Improved contacts to semi‐insulating GaAs photoconductive switches using a graded layer of InGaAs

High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1−xAs to make an ohmic contact to semi‐insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.

J. Whinnery | J. Woodall | D. Kuchta | D. Pettit | J. S. Smith

[1] G. Haddad,et al. Nonalloyed and alloyed low‐resistance ohmic contacts with good morphology for GaAs using a graded InGaAs cap layer , 1989 .

[2] J. Chyi,et al. Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy , 1988 .

[3] H. Kroemer,et al. IIIA-5 AlGaAs/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter , 1986, IEEE Transactions on Electron Devices.

[4] O. Nakajima,et al. Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers , 1986 .

[5] Chi H. Lee. Picosecond optoelectronic devices , 1984 .

[6] T. Jackson,et al. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy , 1981 .