论文信息 - In situ observation of iron atoms in multicrystalline silicon at 1273 and 300 K by mössbauer spectroscopy - 字舞流文

In situ observation of iron atoms in multicrystalline silicon at 1273 and 300 K by mössbauer spectroscopy

K. Fukui | K. Shirasawa | Y. Yoshida | K. Niira | S. Horie

[1] Y. Yoshida,et al. Direct observation of substitutional Fe atoms in Si and SOI wafers at 1273 K , 2003 .

[2] F. Shimura,et al. In-Beam Mössbauer Spectroscopy after GeV-Ion Implantation at an On-line Projectile-Fragments Separator , 2002 .

[3] M. Fanciulli,et al. Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy , 2002 .

[4] A. Yoshida,et al. In-Beam Mössbauer Study of Interstitial and Substitutional 57Mn/57Fe Jumps in Si , 2001 .

[5] U. Gösele,et al. Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology , 1998 .

[6] Laubach,et al. Diffusion and isomer shift of interstitial iron in silicon observed via in-beam Mössbauer spectroscopy. , 1990, Physical review letters.

[7] T. Kawamura,et al. Surface‐ and inner‐microdefects in annealed silicon wafer containing oxygen , 1980 .