论文信息 - Silicon fusion bonding and its characterization

Silicon fusion bonding and its characterization

The basic principles of wafer fusion bonding including pretreatment, room temperature mating, and thermal annealing are presented. Techniques for the characterization of the bond quality are reviewed. Results for fusion bonding of other materials such as silicon nitride and polysilicon are discussed with a view to bond quality and application. Examples of fusion processes for power device fabrication show the feasibility of the technique.

C. Harendt | H. Graf | B. Höfflinger | E. Penteker

[1] C. Harendt,et al. A Smart Power Process in "Direct-Bondedd'' Silicon on Insulator with 150 V VDMOS, CMOS and Bipolar Transistors , 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

[2] B. Hofflinger,et al. A 100-V lateral DMOS transistor with a 0.3-micrometer channel in a 1-micrometer silicon-film-on-insulator-on-silicon , 1991 .

[3] W. Maszara. Silicon‐On‐Insulator by Wafer Bonding: A Review , 1991 .

[4] Heinz-Gerd Graf,et al. Silicon direct bonding for sensor applications: Characterization of the bond quality , 1990 .

[5] Heinz-Gerd Graf,et al. Wafer bonding: Investigation and in situ observation of the bond process , 1990 .

[6] J. Knutti. Silicon Microsystems as an Industry , 1990 .

[7] U. Gösele,et al. A Model for the Silicon Wafer Bonding Process , 1989 .

[8] J. Haisma,et al. Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations , 1989 .

[9] W. Maszara,et al. Bonding of silicon wafers for silicon‐on‐insulator , 1988 .

[10] J. Lasky. Wafer bonding for silicon‐on‐insulator technologies , 1986 .

[11] H. Ohashi,et al. Improved dielectrically isolated device integration by silicon-wafer direct bonding(SDB) technique , 1986, 1986 International Electron Devices Meeting.