Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire
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M. Orlova | O. Rabinovich | S. Didenko | A. Chelny | S. Marenkin | I. Ermoshin | A. Savchuk | N. Kourova | Yu L Akhmerov | Yu . V. Osipov | O. Abdullaev | M. Mezhenny | S. Didenko