Status of InP HEMT technology for microwave receiver applications

The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.

[1]  Y. Yamamoto,et al.  A super low noise V-band AlInAs/InGaAs HEMT processed by selective wet gate recess etching , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[2]  M. Glenn,et al.  High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz , 1990, IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits.

[3]  T. Kobayashi,et al.  Device technologies for InP-based HEMTs and their application to ICs , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

[4]  R. Kono,et al.  Hydrogen degradation of GaAs MMICs and hydrogen evolution in the hermetic package , 1995, IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers.