Sensitivity Analysis on Indium Phosphide Liquid Encapsulated Czochralski Growth

The optimization of the InP liquid encapsulated Czochralski systems is usually difficult, time consuming and very expensive. Here, the relative importance of the different growth parameters (e.g., pull rate, system temperatures and geometry) on the growth interface deflection, the temperature gradients within the melt and the crystal and the dislocation density has been investigated through a sensitivity analysis. The sensitivity coefficients have been calculated by means of a mathematical model, previously validated, based on the thermoelastic theory for the dislocation formation and on the thermal capillary theory for the temperature field within the system. The crucible temperature profile has been selected as the more important parameter to control the crystal quality during the growth.

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