Microstructural evolution at the interface of superconducting thin films and SiC substrate

Given the importance of fabricating superconducting thin-film device heterostructures, studying material interfaces as a function of processing conditions is warranted. In this work, we assess the interfacial reactions and resulting microstructural evolution at the NbN/SiC interface after thermal annealing. Transmission electron microscopy revealed the diffusion of NbN into the SiC substrate and the formation of NbN nanocrystallites therein induced by the 1400°C treatment. Raman spectroscopy is also employed to gain an understanding of the interface lattices’ optical responses.

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