Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon
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Veronica Letka | Andrew R. J. Marshall | Anthony Krier | Richard Beanland | Qi Lu | Eva Repiso | Peter J. Carrington | Evangelia Delli | Peter D. Hodgson | Jonathan P. Hayton | Adam P. Craig | A. Marshall | A. Craig | A. Krier | R. Beanland | Q. Lu | P. Carrington | P. Hodgson | E. Delli | V. Letka | E. Repiso
[1] Alexander Soibel,et al. Mid-wavelength high operating temperature barrier infrared detector and focal plane array , 2018, Applied Physics Letters.
[2] G. Wicks,et al. nBn detector, an infrared detector with reduced dark current and higher operating temperature , 2006 .
[3] W. E. Tennant,et al. “Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance? , 2010 .
[4] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[5] Manijeh Razeghi,et al. InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection , 2014 .
[6] Huiyun Liu,et al. Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates , 2018 .
[7] Jens H. Schmid,et al. Roadmap on silicon photonics , 2016 .
[8] J. Klem,et al. Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices , 2016 .
[9] Manijeh Razeghi,et al. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection , 2014 .
[10] J. W. Matthews,et al. Defects in epitaxial multilayers , 1974 .
[11] S. Krishna,et al. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations , 2012 .
[12] D. Lackner. InAsSb/InAs strain balanced superlattices for photodetector applications , 2011 .
[13] David J. Dunstan,et al. Design rules for dislocation filters , 2014 .
[14] A. D. Prins,et al. Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors , 2015 .
[15] Naokatsu Yamamoto,et al. Heteroepitaxial growth of GaSb on Si(0 0 1) substrates , 2004 .
[16] John H. Lau,et al. Recent Advances and New Trends in Flip Chip Technology , 2016 .
[17] Manijeh Razeghi,et al. InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection , 2016, SPIE Defense + Security.
[18] Satrio Wicaksono,et al. Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region. , 2018, Optics express.
[19] Shui-Qing Yu,et al. Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy , 2007 .
[20] T. F. Boggess,et al. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice , 2012 .
[21] Philip Klipstein,et al. "XBn" barrier photodetectors for high sensitivity and high operating temperature infrared sensors , 2008, SPIE Defense + Commercial Sensing.
[22] Thomas E. Vandervelde,et al. Progress in Infrared Photodetectors Since 2000 , 2013, Sensors.
[23] Sanjay Krishna,et al. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays , 2013 .
[24] Satrio Wicaksono,et al. Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics , 2018 .
[25] Kyungmin Chung,et al. Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001 ) substrate by molecular beam epitaxy method , 2010 .
[26] Manijeh Razeghi,et al. Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices , 2015 .
[27] Steve Grossman,et al. MWIR InAsSb XBn detectors for high operating temperatures , 2010, Defense + Commercial Sensing.
[28] U. Serincan,et al. Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array , 2018 .
[29] E. Michel,et al. InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy , 1996, IEEE Photonics Technology Letters.
[30] Laurent Cerutti,et al. Quantum cascade lasers grown on silicon , 2018, 2018 International Conference Laser Optics (ICLO).