Analysis of nonlinearities in RF CMOS amplifiers

The analysis of nonlinearities in RF CMOS circuits is performed. Equations describing nonlinear behaviour of source degenerated common-source transconductance stages, differential-pairs, common-gate and cascode amplifier stages are derived. A comparison between capacitive, resistive and inductive degeneration is performed. Emphasis is given on the effect of design parameters such as transistor width and DC-bias currents on the performance.

[1]  R. Meyer,et al.  High-frequency nonlinearity analysis of common-emitter and differential-pair transconductance stages , 1998, IEEE J. Solid State Circuits.

[2]  T. Ohguro,et al.  The impact of scaling down to deep-submicron on CMOS RF circuits , 1998, Proceedings of the 23rd European Solid-State Circuits Conference.

[3]  T.H. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.