Bridging wide bandgap nanowires for ultraviolet light detection

A single-step bridging method is used to fabricate bridged wide bandgap semiconductor nanowire structures as ultraviolet photodetectors. The nanowires are bridged across self-grown electrodes in a chemical vapor deposition process without resorting to epitaxial growth and photolithography techniques. Depending on the surface depletion properties of the nanowires, two types of bridged nanowire structures are designed. For ZnO nanowires with strong surface depletion effect, a bascule nanobridge structure is adopted. For β-Ga2O3 nanowires with weak surface depletion effect, a direct nanobridge structure is used. The bridged nanowire photodetectors are operated with a few volts and show good spectral selectivity, and high and fast photoresponse.

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