Hig Voltage Bipolar-Mode MOSFET with High Current Capability

1200V and 600V 100A bipolar-mode power MoS FETs (BIFET) have been deveroped in 6 mm square chips. 1200v BTFETs turn-off more than 75 Amps drain current within 2psec at 125oc. High current handling capability could be obtained by an optimized source-gate pattern and an additional shallow p+ base diffusion. ft was comfirmed that a low cn-resistance with a high blocking voltage can be attained in BTFETs more easily than in bi-polar transistors.