论文信息 - Doping profiles in CdTe/CdS thin film solar cells - 字舞流文

Doping profiles in CdTe/CdS thin film solar cells

U. Reislöhner | H. Metzner | W. Witthuhn | M. Hädrich | N. Lorenz

[1] N. Rega,et al. Admittance spectroscopy of polycrystalline and epitaxially grown CuGaSe2 , 2005 .

[2] M. Burgelman,et al. Admittance spectroscopy of thin film solar cells , 2005 .

[3] M. Burgelman,et al. DLTS and admittance measurements on CdS/CdTe solar cells , 2003 .

[4] M. Burgelman,et al. Importance of air ambient during CdCl/sub 2/ treatment of thin film CdTe solar cells studied through temperature dependent admittance spectroscopy , 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..

[5] F. Hasoon,et al. Deep-level impurities in CdTe/CdS thin-film solar cells , 2000 .

[6] M. Konagai,et al. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance–Voltage Profiling Technique , 2000 .

[7] K. Durose,et al. A deep semiconductor defect with continuously variable activation energy and capture cross section , 1999 .

[8] Peter Blood,et al. The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , 1992 .

[9] H. Fu,et al. Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions , 1972 .