论文信息 - Optical and electrical properties of the CdS quantum wells of CdS/ZnSe heterostructures

Optical and electrical properties of the CdS quantum wells of CdS/ZnSe heterostructures

Earlier we reported the investigation of the electrical properties of selectively doped and degenerate CdS/ZnSe quantum heterostructures grown by molecular beam epitaxy. The maximum Hall mobilities in these heterostructures were nevertheless still inferior to 400 cm2/Vs. The purpose of the present work was to optimize these quantum structures in order to increase the carrier mobility and to analyze in detail the scattering mechanisms. We demonstrate that the Hall mobility in the CdS quantum well (QW) can reach 2800 cm2/Vs for slightly doped structures at low temperatures and that it is mostly limited by interface alloying scattering.

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