论文信息 - Characterization of nonlinear behavior of GaAs HFET power amplifier IC based on multitone measurement and simulation

Characterization of nonlinear behavior of GaAs HFET power amplifier IC based on multitone measurement and simulation

A characterization of nonlinear behavior of GaAs HFET power amplifier has been carried out. The SHF0186K GaAs HFET model, which is used to derive the Curtice-Ettenberg model parameter, was extracted. We use these model parameters to characterize the amplifier based on multitone simulation. In this project, we also investigate the nonlinear behavior of an amplifier under various gate-source voltages. The simulation result, therefore, is compared with the measurement result.

Mervin T. Hutabarat | B. R. Alam | A. Saripudin

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