论文信息 - A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths

A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths

Single-crystal nanotubes of controlled lengths were produced on sidewalls of V-grooves and on a cleaved facet of a heterostructure. This was done using selective molecular-beam-epitaxy growth of a strained InGaAs/GaAs strip and subsequent self-rolling of this strip in a tube. The proposed technique is capable of ensuring good reproducibility for all sizes and exact positioning of nanotubes.

A. K. Gutakovsky | V. Prinz | V. Preobrazhenskii | B. Semyagin | A. Chekhovskiy

[1] T. Watanabe,et al. Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates , 1997 .

[2] A. Rinzler,et al. Length control of individual carbon nanotubes by nanostructuring with a scanning tunneling microscope , 1997 .

[3] M. Notomi,et al. Novel Selective Growth Using a Native Oxide on a (110) Cleaved Plane of AlGaAs/GaAs Superlattice , 1995 .

[4] Nan Yao,et al. Radial compression and controlled cutting of carbon nanotubes , 1998 .

[5] V. I. Mashanov,et al. Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils , 2001 .