Neutron Induced Energy Deposition in a Silicon Diode

Simulation of energy deposition in silicon by nuclear reactions is a crucial point for single event prediction tool development. In order to compare with the simulation of nuclear reactions, a silicon diode is irradiated by a 30 MeV and 63 MeV neutron beam and the energy deposited by each nuclear reaction is measured. Simulation of the ionizing energy deposition in the irradiated diode is performed by the Monte Carlo method using nuclear reaction databases. Neutron beam spectra and surrounding materials are taken into account. Experimental and simulated results are shown to be in good agreement.

[1]  Arjan J. Koning,et al.  Local and global nucleon optical models from 1 keV to 200 MeV , 2003 .

[2]  Guillaume Hubert,et al.  Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions , 2001 .

[3]  F. W. Sexton,et al.  Contribution of device simulation to SER understandfng , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[4]  F. Brady,et al.  Neutron Total Cross Sections of the Light Elements in the Energy Range 24-60 MeV , 1972 .

[5]  M. Calvet,et al.  Contribution of SiO/sub 2/ in neutron-induced SEU in SRAMs , 2003 .

[6]  M. Calvet,et al.  Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections , 2001 .

[7]  Arjan J. Koning,et al.  A global pre-equilibrium analysis from 7 to 200 MeV based on the optical model potential , 2004 .

[8]  Kalbach.  Surface effects in the exciton model of preequilibrium nuclear reactions. , 1985, Physical review. C, Nuclear physics.

[9]  Kalbach.  Systematics of continuum angular distributions: Extensions to higher energies. , 1988, Physical review. C, Nuclear physics.

[10]  A. Taber,et al.  Single event upset in avionics , 1993 .

[11]  J. Gasiot,et al.  A new approach for the prediction of the neutron-induced SEU rate , 1998 .

[12]  Neutron Energy-Deposition Spectra Measurements, and Comparisons with Geant4 Predictions , 2005, IEEE Transactions on Nuclear Science.

[13]  P. Mcnulty,et al.  Measurement of the Energy Depositions in a Silicon Volume by 14 MeV Neutrons , 2006, IEEE Transactions on Nuclear Science.

[14]  Frederic Wrobel,et al.  Detailed history of recoiling ions induced by nucleons , 2008, Comput. Phys. Commun..

[15]  L. Dusseau,et al.  Determination of the Deposited Energy in a Silicon Volume by n-Si Nuclear Interaction using 14 MeV neutron source , 2006 .

[16]  F. Wrobel,et al.  Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER , 2005, IEEE Transactions on Nuclear Science.

[17]  F. Miller,et al.  Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing , 2006, IEEE Transactions on Nuclear Science.

[18]  E. L. Petersen.  Nuclear Reactions in Semiconductors , 1980, IEEE Transactions on Nuclear Science.

[19]  Guillaume Hubert,et al.  Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs , 2001 .

[20]  H.H.K. Tang,et al.  Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground , 2004, IEEE Transactions on Nuclear Science.

[21]  E. Normand.  Single event upset at ground level , 1996 .

[22]  Jean-Pierre Meulders,et al.  Quasi-monoenergetic neutron beams with energies from 25 to 70 MeV , 1999 .

[23]  Frédéric Wrobel,et al.  Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions , 2000 .