A low-power capacitance to pulse width converter for MEMS interfacing

A compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 mum/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 times 515 mum2. Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/degC, and power consumption as low as 84 muW for continuous operation.