Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET
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[2] S. Jain,et al. Preparation and properties of the GeSi-oxide system , 1993 .
[3] K. Wang,et al. Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on , 1992 .
[4] J. Bokor,et al. Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel , 2000, IEEE Electron Device Letters.
[5] S.K. Banerjee,et al. A deep submicron Si/sub 1-x/Ge/sub x//Si vertical PMOSFET fabricated by Ge ion implantation , 1998, IEEE Electron Device Letters.
[6] R. Lander,et al. Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's , 1999 .
[7] A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current , 2000 .