Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth

[1]  W. L. Chan,et al.  A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[2]  M. Fujishima,et al.  Wideband CMOS decoupling power line for millimeter-wave applications , 2015, 2015 IEEE MTT-S International Microwave Symposium.

[3]  Qun Jane Gu,et al.  A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching , 2011, IEEE Microwave and Wireless Components Letters.

[4]  Qun Jane Gu,et al.  200 GHz CMOS amplifier working close to device f T , 2011 .

[5]  Chun-Lin Ko,et al.  A 210-GHz Amplifier in 40-nm Digital CMOS Technology , 2013, IEEE Transactions on Microwave Theory and Techniques.

[6]  Chien-Nan Kuo,et al.  A 147 GHz fully differential D-band amplifier design in 65 nm CMOS , 2013, 2013 Asia-Pacific Microwave Conference Proceedings (APMC).

[7]  M. Fujishima,et al.  Compact 160-GHz amplifier with 15-dB peak gain and 41-GHz 3-dB bandwidth , 2015, 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[8]  Kosuke Katayama,et al.  E-Band 65nm CMOS Low-Noise Amplifier Design Using Gain-Boost Technique , 2014, IEICE Trans. Electron..

[9]  Guo-Wei Huang,et al.  A 1.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

[10]  Kenichi Okada,et al.  A 60GHz CMOS power amplifier using capacitive cross-coupling neutralization with 16 % PAE , 2011, 2011 6th European Microwave Integrated Circuit Conference.

[11]  Chewn-Pu Jou,et al.  A V-band low-noise amplifier with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF CMOS , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.