论文信息 - Surface-potential-based MOSFET models with introduction to PSP (invited)

Surface-potential-based MOSFET models with introduction to PSP (invited)

We review compact modeling techniques that enable a surface-potential-based approach to modeling MOS transistors. These include symmetric linearization method, an analytical approximation of surface potential and surfacepotential-based extrinsic device model. General techniques are illustrated by application to the PSP model.

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