论文信息 - Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfxZr1-xO2/Interlayer/Si (MFIS) Gate Structure - 字舞流文

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfxZr1-xO2/Interlayer/Si (MFIS) Gate Structure

K. Han | Tianchun Ye | Wenwu Wang | Shujing Zhao | Xiaolei Wang | J. Xiang | Tingting Li | Hao Xu | F. Tian | W. Xiong | Junshuai Chai | Jiahui Duan