论文信息 - Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators

Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators

SiGe HBTs featuring a high quality oxide passivation show ideal Gummel plots and low 1/f noise with corner frequencies down to 300 Hz. The measured KB-factor of 2.6 × 10–10 µm2s is the lowest of any previously reported HBT. With an f⊤ of 40 GHz, the devices are ideal for low phase noise microwave oscillators. A simple 10 GHz microstrip resonator showed –100 dBc at 100 kHz off carrier.

Andreas Gruhle | A. Gruhle | C. Mahner | C. Mahner

[1] J. Babcock,et al. Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[2] A. Schuppen,et al. SiGe-HBTs with high fT at moderate current densities , 1994 .

[3] Sethumadhavan Chandrasekhar,et al. Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors , 1996 .

[4] T. Kleinpenning,et al. Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors , 1994, ESSDERC '94: 24th European Solid State Device Research Conference.