论文信息 - A sub-50 ps single poly planar bipolar technology

A sub-50 ps single poly planar bipolar technology

The authors present a single-poly bipolar technology using an advanced transistor with an LDD (lightly doped drain)-like self-aligned lateral profile. The device is isolated by a silicon-filled deep trench with a collector-to-collector breakdown voltage of 33 V, and the field oxide is provided by a low-temperature breakless process. The integrated process yields a structure with minimal topography, thereby avoiding several serious concerns associated with the conventional double-poly structures. Using this technology, sub-50-ps ECL (emitter coupled logic) circuits have been realized, demonstrating for the first time the potential of the single-poly device.<<ETX>>

[1] J.M.C. Stork,et al. Bipolar transistor with self-aligned lateral profile , 1987, IEEE Electron Device Letters.

[2] Y. Amemiya,et al. A 20 ps/G Si Bipolar IC Using Advanced SST with Collector Ion Implantation , 1987 .

[3] Ching-Te Chuang,et al. Effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors , 1987, IEEE Electron Device Letters.

[4] K. Nakazato,et al. A 48ps ECL in a self-aligned bipolar technology , 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[5] H. Goto,et al. A sub-40 ps ECL circuit at a switching current of 1.28 MA , 1987, 1987 International Electron Devices Meeting.

[6] Ching-Te Chuang,et al. An advanced bipolar transistor with self-aligned ion-planted base and W/poly emitter , 1988 .

[7] E. Hackbarth,et al. Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors , 1988 .