Rigorous simulation of ballistic graphene-based transistor

Graphene transistors are currently the object of deep investigation, both in theoretical and experimental directions. In this contribution, we show self-consistent analysis of graphene based FETs, in a ballistic framework, in order to provide a rigorous tool to improve knowledge of the device behavior down to the nanoscale. Still, many points remain open, and there is a high demand for numerical tools able to capture all the features of the above ballistic device. Here, the analysis is performed by Dirac description of graphene wavefunctions, which holds for slowly-varying potential-perturbations. Charge-potential self-consistency is ensured by iteration of transport and Poisson equations.