Fundamental relation between local and effective transverse field dependent mobility for electrons in inversion channels
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[1] J. Plummer,et al. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces , 1980 .
[2] S. Russek,et al. Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer , 1983, IEEE Transactions on Electron Devices.
[3] A. Rothwarf. A new quantum mechanical channel mobility model for Si MOSFET's , 1987, IEEE Electron Device Letters.
[4] Massimo Vanzi,et al. A physically based mobility model for numerical simulation of nonplanar devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[5] A. Tasch,et al. A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers , 1989 .
[6] M. Lundstrom. Fundamentals of carrier transport , 1990 .