论文信息 - Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics - 字舞流文

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

A. Ramdane | G. Patriarche | T. Ng | D. Decoster | B. Janjua | E. Dogheche | S. Belahsene | B. Alshehri | K. Dogheche | Boon S-Ooi