论文信息 - Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

This letter reports the first demonstration of 101 kV trenched-and-implanted normally off 4H-SiC vertical junction field-effect transistor (TI-VJFET) with a 120 /spl mu/m /spl sim/4.9/spl times/10/sup 14/ cm/sup -3/-doped drift layer. Blocking voltages (V/sub B/) of 10 kV to 11 kV have been measured. The best specific on-resistance (R/sub SP/_/sub ON/) normalized to source active area has been determined to be 130 m/spl Omega//spl middot/cm/sup 2/. Three-dimensional computer modeling including current spreading effect shows that the TI-VJFET would have a specific resistance of 168 m/spl Omega//spl middot/cm/sup 2/ if it is scaled up substantially in size.

[1] K. Asano,et al. 5kV 4H-Sic SEJFET with Low RonS of 69m12cm2 , 2002 .

[2] Peter Friedrichs,et al. Application-Oriented Unipolar Switching SiC Devices , 2002 .

[3] Maurice Weiner,et al. A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET , 2002 .

[4] Li Hui Cao,et al. Theoretical and Experimental Study of 4H-SiC Junction Edge Termination , 2000 .

[5] Atsuo Watanabe,et al. 2 kV 4H-SiC Junction FETs , 2002 .

[6] Jian H. Zhao,et al. 4H-SiC normally-off vertical junction field-effect transistor with high current density , 2003, IEEE Electron Device Letters.

[7] 5 kV 4H-SiC SEJFET with low RonS of 69m/spl Omega/cm/sup 2/ , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[8] M. Melloch,et al. Status and prospects for SiC power MOSFETs , 2002 .